Temperature-dependent DRAM refresh circuit

Details Temperature-dependent DRAM refresh circuit Temperature-dependent DRAM refresh circuit

1991-04-12

1994-01-11

Ham, Seungsook

Static information storage and retrieval

Read/write circuit

Differential sensing

365222, 365227, G11C 1134

Patent

active

052787966

ABSTRACT:
A temperature sensing circuit allows a DRAM array to use less power than would normally be possible due to the reduced refresh rate based on the temperature of the DRAM array. The temperature circuit removes the refresh guardbanding on the DRAMS. Instead of refreshing a 1 megabyte DRAM every 8 ms, refreshing the DRAMs every 128 ms is possible, depending on the temperature of the DRAM array.

REFERENCES:
patent: 3851316 (1974-11-01), Kodama
patent: 4920489 (1990-04-01), Hubelbank et al.

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