Temperature controlled chuck for elevated temperature etch proce

Details Temperature controlled chuck for elevated temperature etch proce Temperature controlled chuck for elevated temperature etch proce

1990-03-14

1990-11-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156345, 156646, 20419233, 20429832, B44C 122, H01L 21306, C23F 100, C03C 1500

Patent

active

049716530

ABSTRACT:
A parallel plate plasma type etching apparatus is provided with a temperature control chuck 44 so that elevated substrate temperatures are controlled. With an elevated substrate temperature, the reaction rate is increased. With positive temperature control, the likelihood of damage to the semiconductor devices is significantly reduced. The chuck is provided with a large number of equally spaced electrical heaters 72 and control of the heaters is by a temperature sensor 74.

REFERENCES:
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4886571 (1989-12-01), Suzuki et al.

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