Temperature controlled chamber

Details Temperature controlled chamber Temperature controlled chamber

2000-03-24

2003-07-29

Utech, Benjamin L. (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

C118S7230AN

Reexamination Certificate

active

06598559

ABSTRACT:

BACKGROUND
The present invention relates to temperature control in a chamber for processing a substrate.
In the fabrication of devices for electronic applications, semiconductor, dielectric and conductor materials, such as for example, polysilicon, silicon dioxide, and metal-containing layers, are formed on a substrate by chemical vapor deposition (CVD), physical vapor deposition (PVD), oxidation or nitridation processes. In a typical CVD process, a gas provided in the chamber is decomposed to deposit material on the substrate. In a typical PVD process, a target facing the substrate is sputtered to deposit the target material on the substrate. These materials may be etched in etching processes to form features such as gates, vias, contact holes and interconnect lines. In a typical etching process, a patterned etch-resistant material, such as resist or hard mask, is formed on the substrate, and exposed portions of the substrate are etched by an energized gas.
It is desirable to control the temperatures in the chamber and on the substrate especially when the substrate fabrication process is temperature dependent. In certain etching processes, such as for example, platinum or copper etching, an elevated temperature may be needed to etch the substrate, and in other etching processes, such as for example aluminum etching, a lower or more uniform temperature may be desirable. In yet other etching processes, the shape of the etched features may be dependent upon the substrate temperature. In CVD and PVD processes, the deposition rate may be dependent upon the temperature in the chamber and of the substrate. Thus it is desirable to control the temperatures in the chamber and of the substrate.
It is also desirable to maintain the temperatures across certain chamber surfaces at uniform or consistent levels. For example, residues formed on chamber surfaces can flake off due to thermal stresses that arise from temperature fluctuations in or between process cycles. The flaked off residues may fall upon and contaminate the substrate. Maintaining chamber surfaces at particular temperatures may also reduce deposition of process byproducts and residue on the surfaces.
Accordingly it is desirable to control the temperatures of substrate and chamber surfaces and reduce temperature fluctuations in or between process cycles.
It may also be desirable to have a chamber that can rapidly reach elevated temperatures from lower temperatures.
SUMMARY
The present invention satisfies these needs. In one aspect, the invention comprises a substrate processing chamber comprising a substrate support, and a wall about the substrate support, the wall having a radiation absorbing surface adapted to preferentially absorb radiation having wavelengths in the visible or infra-red spectrum.
In another aspect, a substrate processing apparatus comprises a chamber comprising a substrate support, the chamber having a wall with a radiation absorbing surface adapted to preferentially absorb radiation having wavelengths in the visible or infra-red spectrum, and a heat source to provide radiation to the radiation absorbing surface, the radiation having wavelengths in the visible or infra-red spectrum.
In yet another aspect, a method of processing a substrate, comprises placing a substrate in a chamber, providing a radiation absorbing surface on a wall of the chamber, the radiation absorbing surface adapted to preferentially absorb radiation having wavelengths in the visible or infra-red spectrum, and directing radiation having wavelengths in the visible,or infra-red spectrum against the radiation absorbing surface.


REFERENCES:
patent: 4184188 (1980-01-01), Briglia
patent: 4384918 (1983-05-01), Abe
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4480284 (1984-10-01), Tojo et al.
patent: 4665463 (1987-05-01), Ward et al.
patent: 4753192 (1988-06-01), Goldsmith et al.
patent: 4778326 (1988-10-01), Althouse et al.
patent: 4780372 (1988-10-01), Tracy et al.
patent: 4832781 (1989-05-01), Mears
patent: 5104834 (1992-04-01), Watanabe et al.
patent: 5140940 (1992-08-01), Lindner
patent: 5151845 (1992-09-01), Watanabe et al.
patent: 5213349 (1993-05-01), Elliott
patent: 5255153 (1993-10-01), Nozawa et al.
patent: 5270266 (1993-12-01), Hirano et al.
patent: 5280156 (1994-01-01), Niori et al.
patent: 5314541 (1994-05-01), Saito et al.
patent: 5338827 (1994-08-01), Serafini et al.
patent: 5729423 (1998-03-01), Donde et al.
patent: 5837555 (1998-11-01), Kaltenbrunner et al.
patent: 5872889 (1999-02-01), Kaltenbrunner et al.
patent: 6015465 (2000-01-01), Kholodenko et al.
patent: 6165311 (2000-12-01), Collins et al.
patent: 6258170 (2001-07-01), Somekh et al.
patent: 6307184 (2001-10-01), Womack et al.
patent: 6326597 (2001-12-01), Lubomirsky et al.
patent: 0171011 (1986-02-01), None
patent: 0439000 (1991-01-01), None
patent: 0452222 (1991-10-01), None
patent: 0473930 (1992-03-01), None
patent: 0635869 (1995-01-01), None
patent: 63031732 (1988-02-01), None
patent: 1-298721 (1989-12-01), None
patent: 2-27748 (1990-01-01), None
patent: 02-283700 (1990-11-01), None
patent: 3286834 (1991-12-01), None
patent: 3286835 (1991-12-01), None
patent: 4367247 (1992-12-01), None
patent: 5069489 (1993-03-01), None
“Silicon Nitride Powder”-Reade. http://www.reade.com/Products/Nitrides/silicon_nitride.html.
“Nano-Sized Powders”-Reade. http://www.reade.com/Products/Nitrides/Silicon_Nitride.html.
Klein, Allen J., “Curing Techniques for Composites,”Advanced Composites, Mar./Apr. 1988, pp. 32-44.
Nakasuji, et al., “Low Voltage and High Speed Operating Electrostatic Wafer Chuck,”J. Vac. Sci. Technol. A., vol. 10, No. 6, Nov./Dec. 1992, pp. 3573-3578.
Arlon brochure, “55NT Multifunctional Epoxy on Aramid Non-woven Reinforcement,” 7 pages.
Arlon brochure, “85NT Non-MDA Polyimide on Aramid Non-woven Reinforcement,” 3 pages.
DuPont Advanced Fibers Systems brochure, “DuPont Thermount® Nonwoven Aramid Reinforcement for Printed Wiring Boards,” 9 pages.
DuPont Advanced Fibers Systems brochure, “NOMEX® Aramid Paper type 410 Typical Properties,” 8 pages.
“Kapton General Information,” Technical Brochure from DuPont de Nemours Company, Wilmington, Delaware (1993).
“Kapton KJ” Technical Information from Dupont Films.
“R/flex® 1100 High Temperature Materials,” Data Sheet DS20903D, Rogers Corporation, Chandler, Arizona (1993).
IBM Technical Disclosure Bulletin, vol. 31, No. 1, Jun. 1988, pp. 461-464, “Electrostatic Wafer Holder for Wafer Cooling During Reactive Ion Etching”.
International Search Report dated Jun. 9, 1995.
U.S. Patent Application entitled, “An Electrostatic Chuck Having a Grooved Surface”; filed Jul. 20, 1993; Ser. No. 08/094,640; Inventor: Steger; Attorney Docket No. 260.
U.S. Patent Application entitled, “Protective Coating for Dielectric Material on Wafer Support Used in Integrated Circuit Processing Apparatus and Method of Forming Same,” filed Apr. 22, 1993; Ser. No. 08/052,018, Inventors: Wu, et al.; Attorney Docket No. 428.
U.S. Patent Application entitled, “Electrostatic Chuck,” filed Jan. 31, 1994; Ser. No. 08/189,562; Inventors: Shamouilian, et al.; Attorney Docket No. 527.

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