Temperature controlled anode for plasma dry etchers for etching

Details Temperature controlled anode for plasma dry etchers for etching Temperature controlled anode for plasma dry etchers for etching

1988-07-18

1989-08-22

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 42218605, B01J 1912, C23C 1450

Patent

active

048593044

ABSTRACT:
A plasma dry etch chamber is provided with an anode plate which has a cooling jacket which extends radially outwardly from a cooling core to an extent corresponding to the radial dimension of a silicon wafer work product. In order to further reduce deposit formation, the outer perimeter of the anode is designed to reduce the effects of polymer deposition.

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patent: 4793975 (1988-12-01), Drage

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