Temperature control method for photolithographic substrate

Details Temperature control method for photolithographic substrate Temperature control method for photolithographic substrate

2011-01-11

2011-01-11

Culbert, Roberts (Department: 1716)

Etching a substrate: processes

Forming or treating mask used for its nonetching function

C216S067000, C430S005000

Reexamination Certificate

active

07867403

ABSTRACT:
The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.

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