Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-12-05
2006-12-05
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S211000, C365S148000, C365S163000, C977S943000
Reexamination Certificate
active
07145824
ABSTRACT:
Systems and methodologies are provided for temperature compensation of thin film diode voltage levels in memory sensing circuits. The subject invention includes a temperature sensitive bias circuit and an array core with a temperature variable select device. The array core can consist of a thin film diode in series with a nanoscale resistive memory cell. The temperature sensitive bias circuit can include a thin film diode in series with two resistors, and provides a temperature compensating bias voltage to the array core. The thin film diode of the temperature sensitive bias circuit tracks the diode of the array core, while the two resistors create a resistive ratio to mimic the effect of temperature and/or process variation(s) on the array core. The compensating bias reference voltage is generated by the temperature sensitive bias circuit, duplicated by a differential amplifier, and utilized to maintain a constant operation voltage level on the nanoscale resistive memory cell.
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Bill Colin S.
Cai Wei Daisy
Amin & Turocy LLP
Mai Son L.
Spansion LLC
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