Temperature compensation for silicon MEMS resonator

Details Temperature compensation for silicon MEMS resonator Temperature compensation for silicon MEMS resonator

2008-04-22

2008-04-22

Summons, Barbara (Department: 2817)

Wave transmission lines and networks

Coupling networks

Electromechanical filter

C333S197000, C333S200000

Reexamination Certificate

active

07362197

ABSTRACT:
Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.

REFERENCES:
patent: 6410361 (2002-06-01), Dhuler et al.
patent: 6557419 (2003-05-01), Herb et al.
patent: 6667245 (2003-12-01), Chow et al.
patent: 6800503 (2004-10-01), Kocis et al.
patent: 7068125 (2006-06-01), Lutz et al.
patent: 7071793 (2006-07-01), Lutz et al.
patent: 7202761 (2007-04-01), Lutz et al.

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