Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-08-23
2005-08-23
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S230060, C327S512000, C327S513000, C327S132000
Reexamination Certificate
active
06934209
ABSTRACT:
A T-RAM memory cell includes a temperature compensation device to adjust the gate-to-source voltage of an access transistor for the memory cell as a function of temperature so that the sub-threshold current of the transistor is insensitive to temperature variations. As a result, the sub-threshold current can be maintained slightly above the holding current of a thyristor used in the memory cell despite substantial temperature variations. In one embodiment, the temperature compensation device includes a current source directing a fixed current through a diode-connected transistor of the type used as the memory cell access transistor. Temperature induced changes in a reference voltage generated at the junction between the current source and the transistor therefore match the temperature induced changed in the sub-threshold current of the access transistor. As a result, the sub-threshold current of the access transistor can be made insensitive to temperature variations by applying the reference voltage to the gate or source of the access transistor.
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Dorsey & Whitney LLP
Micro)n Technology, Inc.
Nguyen Van-Thu
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