Temperature compensated switching circuit

Details Temperature compensated switching circuit Temperature compensated switching circuit

1978-05-09

1980-09-02

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307254, 307249, 307317A, H03K 326, H03K 1760

Patent

active

042208777

ABSTRACT:
Temperature compensation is provided in a switching circuit for the channel resistance of a MOS/FET transistor through which a voltage source is applied to an output terminal. The gate-source voltage of the transistor is varied directly with temperature changes to hold the channel resistance substantially constant within the switching circuit. In a particular embodiment, at least one output level of a pulse amplifier is controlled through the temperature compensated switching circuit of the invention. The other output level of this pulse amplifier is applied through a bipolar transistor of a second switching circuit in another embodiment. The base current of the bipolar transistor is varied inversely with temperature to hold the saturation voltage drop thereacross substantially constant within the second switching circuit. High temperature nonsaturating means for interrupting the base current to the bipolar transistor is combined with this temperature compensation to enhance the turn-on speed of the bipolar transistor, in still another embodiment.

REFERENCES:
patent: 3715609 (1973-02-01), Hallen
patent: 3867644 (1975-02-01), Cline
patent: 3975649 (1976-08-01), Kawagoe et al.

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