Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-03-15
2005-03-15
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S213000
Reexamination Certificate
active
06868025
ABSTRACT:
A temperature compensated RRAM sensing circuit to improve the RRAM readability against temperature variations is disclosed. The circuit comprises a temperature dependent element to control the response of a temperature compensated circuit to generate a temperature dependent signal to compensate for the temperature variations of the resistance states of the memory resistors. The temperature dependent element can control the sensing signal supplied to the memory resistor so that the resistance states of the memory resistor are compensated against temperature variations. The temperature dependent element can control the reference signal supplied to the comparison circuit so that the output signal provided by the comparison circuit is compensated against temperature variations. The temperature dependent element is preferably made of the same material and process as the memory resistors.
REFERENCES:
patent: 5787042 (1998-07-01), Morgan et al.
patent: 5883827 (1999-03-01), Morgan et al.
patent: 6169686 (2001-01-01), Brug et al.
patent: 6185143 (2001-02-01), Perner et al.
patent: 6188615 (2001-02-01), Perner et al.
patent: 6259644 (2001-07-01), Tran et al.
patent: 6262625 (2001-07-01), Perner et al.
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6317375 (2001-11-01), Perner et al.
patent: 6317376 (2001-11-01), Tran et al.
patent: 6341084 (2002-01-01), Numata et al.
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6385111 (2002-05-01), Tran et al.
patent: 6462979 (2002-10-01), Schlosser et al.
patent: 6496051 (2002-12-01), Hsu
patent: 6504779 (2003-01-01), Perner et al.
patent: 6577549 (2003-06-01), Tran et al.
patent: 6608790 (2003-08-01), Tran et al.
patent: 6735546 (2004-05-01), Scheuerlein
patent: 6753562 (2004-06-01), Hsu et al.
Curtin Joseph P.
Phung Anh
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
LandOfFree
Temperature compensated RRAM circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Temperature compensated RRAM circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature compensated RRAM circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3366933