Temperature based DRAM refresh

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

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Details

C365S063000, C365S211000

Reexamination Certificate

active

11000560

ABSTRACT:
A system for controlling the refresh cycles of a DRAM cell array based upon a temperature measurement. During active mode, a refresh request indication based on a measured temperature is provided to a DRAM controller (e.g. of another integrated circuit die), wherein the DRAM controller initiates a refresh cycle of the DRAM cell array in response thereto. In a self refreshing mode, the DRAM controller does not initiate refresh cycles, but refresh cycles are performed by a controller on the integrated circuit die of the array based upon a temperature measurement.

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“Mobile-RAM, Speciality DRAMs”; Application Note; Feb. 2002; pp. 1-6; V 1.1; Infeneon Technologies AG.

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