Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-04-17
2007-04-17
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S063000, C365S211000
Reexamination Certificate
active
11000560
ABSTRACT:
A system for controlling the refresh cycles of a DRAM cell array based upon a temperature measurement. During active mode, a refresh request indication based on a measured temperature is provided to a DRAM controller (e.g. of another integrated circuit die), wherein the DRAM controller initiates a refresh cycle of the DRAM cell array in response thereto. In a self refreshing mode, the DRAM controller does not initiate refresh cycles, but refresh cycles are performed by a controller on the integrated circuit die of the array based upon a temperature measurement.
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Cruz Arnaldo R.
Qureshi Qadeer A.
Dolezal David G.
Freescale Semiconductor Inc.
Pham Ly Duy
Zarabian Amir
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