TEM sample preparation from a circuit layer structure

Radiant energy – Inspection of solids or liquids by charged particles – Methods

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S311000, C250S492210, C315S382000, C430S005000

Reexamination Certificate

active

07317188

ABSTRACT:
A method of TEM sample preparation from a circuit layer structure, the method comprising electron-beam assisted deposition of a first protective layer over a site of interest of the circuit layer structure; ion-beam assisted deposition of a second protective layer over the first protective layer; and ion-beam milling at the site of interest through the first and second protective layers.

REFERENCES:
patent: 5104684 (1992-04-01), Tao et al.
patent: 6368753 (2002-04-01), Harriott et al.
patent: 6664552 (2003-12-01), Shichi et al.
patent: 6693290 (2004-02-01), Yamaguchi
patent: 6753538 (2004-06-01), Musil et al.
patent: 6943507 (2005-09-01), Winkler et al.
patent: 7180061 (2007-02-01), Lu

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

TEM sample preparation from a circuit layer structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with TEM sample preparation from a circuit layer structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TEM sample preparation from a circuit layer structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2758206

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.