Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-03-26
2010-12-14
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21564
Reexamination Certificate
active
07851860
ABSTRACT:
An integrated circuit has a buried insulation layer formed over a semiconductor substrate, and a semiconductor mesa formed over the buried insulation layer. A low resistivity guard ring substantially surrounds the semiconductor mesa and is in contact with the semiconductor substrate. The low resistivity guard ring is grounded and isolates the semiconductor mesa from RF signals.
REFERENCES:
patent: 4819052 (1989-04-01), Hutter
patent: 5264387 (1993-11-01), Beyer et al.
patent: 5661329 (1997-08-01), Hiramoto et al.
patent: 5889314 (1999-03-01), Hirabayashi
patent: 6104054 (2000-08-01), Corsi et al.
patent: 6355537 (2002-03-01), Seefeldt
patent: 6429502 (2002-08-01), Librizzi et al.
patent: 6521947 (2003-02-01), Ajmera et al.
patent: 6573565 (2003-06-01), Clevenger et al.
patent: 6645796 (2003-11-01), Christensen et al.
patent: 2003/0085432 (2003-05-01), Du et al.
patent: 2-271567 (1990-06-01), None
Japanese Abstract, Publication No. 02271567, Publication Date Jun. 11, 1990.
European Examination Report from corresponding EP Application No. 05726078, mailed May 12, 2010, 3 pages.
Seefeldt James D.
Yue Cheisan J.
Honeywell International , Inc.
Movva Amar
Shumaker & Sieffert P.A.
Smith Bradley K
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