Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-11-10
2011-12-13
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S689000, C438S745000, C438S761000, C438S765000, C438S769000, C257SE21295
Reexamination Certificate
active
08076240
ABSTRACT:
Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.
REFERENCES:
patent: 2002/0028505 (2002-03-01), Sakai et al.
Duong Anh Ngoc
Lang Chi-l
Intermolecular, Inc.
Lee Kyoung
Richards N Drew
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