Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2006-12-21
2009-10-20
Culbert, Roberts (Department: 1792)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
Reexamination Certificate
active
07604749
ABSTRACT:
Wet anisotropic etching techniques are well known micromachining apparatus in MEMS technology. The wet anisotropic etchant etch some of the material crystal planes faster than the other. For example the (001) planes are etched much faster than the (111) planes. The final shape is dependent upon the etch mask and the crystal planes orientation. A technique is described hereafter where the nature of the wet anisotropic etch process is used for fabrication of electrostatic transducers and in particular electrostatic comb drive actuators and sensors. Using the same anisotropic wet etching technique it is possible to reduce the cross section of suspensions and thus to soften a spring or to change the resonance frequency of mechanical resonators. Final cross section is dependent of the etching time. Under the anisotropic wet etching the cross section of the suspensions is changed rapidly.
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patent: 5594172 (1997-01-01), Shinohara
patent: 5883012 (1999-03-01), Chiou et al.
patent: 6020272 (2000-02-01), Fleming
patent: 2002/0195417 (2002-12-01), Steinberg
Culbert Roberts
Dippert William H.
Eckert Seamans Cherin & Mellott , LLC
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