Techniques for the use of amorphous carbon (APF) for various...

Details Techniques for the use of amorphous carbon (APF) for various... Techniques for the use of amorphous carbon (APF) for various...

2006-06-20

2006-06-20

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S724000, C216S041000, C216S058000, C216S067000, C216S072000, C216S075000, C216S079000, C216S081000

Reexamination Certificate

active

07064078

ABSTRACT:
A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.

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