Techniques for temperature-controlled ion implantation

Details Techniques for temperature-controlled ion implantation Techniques for temperature-controlled ion implantation

2007-07-16

2010-02-02

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S443100, C118S7230AN, C216S062000, C216S087000, C427S523000

Reexamination Certificate

active

07655933

ABSTRACT:
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.

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