Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2005-12-06
2005-12-06
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S156000
Reexamination Certificate
active
06972987
ABSTRACT:
Techniques are provided for reducing power consumption in memory cells. A static (SRAM) memory cell includes two cross coupled inverters. One or more transistors are coupled between the inverters and the power supply voltages. The transistors are turned OFF for a period of time during a memory state transition to block current flow between the high power supply voltage and the low power supply voltage to reduce power consumption.
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White Thomas H.
Wong Myron Wai
Altera Corporation
Phung Anh
Townsend and Townsend / and Crew LLP
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