Techniques for reducing power consumption in memory cells

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S156000

Reexamination Certificate

active

06972987

ABSTRACT:
Techniques are provided for reducing power consumption in memory cells. A static (SRAM) memory cell includes two cross coupled inverters. One or more transistors are coupled between the inverters and the power supply voltages. The transistors are turned OFF for a period of time during a memory state transition to block current flow between the high power supply voltage and the low power supply voltage to reduce power consumption.

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patent: 5831896 (1998-11-01), Lattimore et al.
patent: 5901079 (1999-05-01), Chiu et al.
patent: 5986923 (1999-11-01), Zhang et al.
patent: 6128215 (2000-10-01), Lee
patent: 6853578 (2005-02-01), Zhang et al.

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