Techniques for reducing bowing in power transistor devices

Details Techniques for reducing bowing in power transistor devices Techniques for reducing bowing in power transistor devices

2007-01-16

2007-01-16

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S728000

Reexamination Certificate

active

10788678

ABSTRACT:
Power transistor devices and techniques for reducing bowing in such devices are provided. In one aspect, a power transistor device is provided. The power transistor device comprises a substrate, a device film formed on the substrate and an adhesion layer formed on a side of the substrate opposite the device film, wherein at least a portion of the adhesion layer is at least partially segmented. The power transistor device thereby exhibits a reduced amount of bowing relative to an amount of bowing expected without the segmenting of the adhesion layer. The power transistor device may be part of an integrated circuit.

REFERENCES:
patent: 4784973 (1988-11-01), Stevens et al.
patent: 5089438 (1992-02-01), Katz
patent: 5236868 (1993-08-01), Nulman
patent: 5254499 (1993-10-01), Sandhu et al.
patent: 5278100 (1994-01-01), Doan et al.
patent: 5399379 (1995-03-01), Sandhu
patent: 5612253 (1997-03-01), Farahani et al.
patent: 5967878 (1999-10-01), Arcona et al.
patent: 6194773 (2001-02-01), Malhi
patent: 6306761 (2001-10-01), Taguchi
patent: 6465272 (2002-10-01), Davis, Jr. et al.
patent: 2002/0125566 (2002-09-01), Tonami et al.
patent: 2003/0098704 (2003-05-01), Du-Nour et al.
patent: 1 436 434 (1976-05-01), None
U.S. Appl. No. 10/628,941, filed Jul. 29, 2003, Fratti et al.
Stroud et al., “Effect of Bow-Type Initial Imperfection on Reliability of Minimum-Weight Stiffened Structural Panels,” NASA Technical Paper 3263, 1-24, (Jan. 1993).

Affiliated with

Also associated with

Rating

Techniques for reducing bowing in power transistor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Techniques for reducing bowing in power transistor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Techniques for reducing bowing in power transistor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3737283