Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-08-16
2011-08-16
Berman, Jack (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492300, C315S111810, C315S005410, C315S500000, C315S506000, C313S359100, C313S360100
Reexamination Certificate
active
07999239
ABSTRACT:
Techniques for reducing an electrical stress in a acceleration/deceleration system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an acceleration/deceleration system. The acceleration/deceleration system may comprise an acceleration column including a plurality of electrodes having apertures through which a charged particle beam may pass. The acceleration/deceleration system may also comprise a plurality of voltage grading components respectively electrically coupled to the plurality of electrodes. The acceleration/deceleration system may further comprise a plurality of insulated conductors disposed proximate the plurality of voltage grading components to modify an electrical field about the plurality of voltage grading components.
REFERENCES:
patent: 5059859 (1991-10-01), Endo et al.
patent: 5463268 (1995-10-01), Schroeder
patent: 6130436 (2000-10-01), Renau et al.
patent: 6653642 (2003-11-01), Pedersen et al.
patent: 6717079 (2004-04-01), Heller
patent: 7402821 (2008-07-01), Bernhardt
patent: 7675046 (2010-03-01), Tekletsadik et al.
patent: 7692139 (2010-04-01), Koo et al.
patent: 2009/0050347 (2009-02-01), Tekletsadik et al.
patent: 2009/0057572 (2009-03-01), Tekletsadik et al.
patent: 2009/0057573 (2009-03-01), Low et al.
patent: 2009/0072163 (2009-03-01), Lubicki et al.
patent: H06-111755 (1994-04-01), None
U.S. Appl. No. 11/845,441, Tekletsadik, et al.
U.S. Appl. No. 11/847,139, Low, et al.
U.S. Appl. No. 11/841,086, Tekletsadik, et al.
U.S. Appl. No. 11/527,842, Tekletsadik, et al.
U.S. Appl. No. 11/872,576, Low, et al.
U.S. Appl. No. 11/854,852, Lubicki, et al.
Low Russell J.
Tekletsadik Kasegn D.
Berman Jack
Varian Semiconductor Equipment Associates Inc.
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