Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...
Reexamination Certificate
2011-03-22
2011-03-22
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
C438S717000, C438S743000, C257SE21023, C977S742000
Reexamination Certificate
active
07911034
ABSTRACT:
A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask film if the BARC layer is not included). Then, the resist pattern is effectively transferred to the hard mask film by etching the BARC layer (if provided) and etching partly into, but not entirely through, the hard mask film (i.e., etching is stopped before reaching the CNT layer). Then, the resist and the BARC layer (if provided) is stripped, and the hard mask pattern is effectively transferred to the CNTs by etching away (preferably by using C1, F plasma) the portions of the hard mask which have been already partially etched away.
REFERENCES:
patent: 6706402 (2004-03-01), Rueckes et al.
patent: 7538040 (2009-05-01), Gu et al.
patent: 2004/0099438 (2004-05-01), Arthur et al.
patent: 2004/0181630 (2004-09-01), Jaiprakash et al.
patent: 2009/0095704 (2009-04-01), Mao et al.
Carter Richard J.
Elmer James
Gu Shiqun
McGrath Peter G.
Rueckes Thomas
Dang Trung
Nantero Inc.
Wilmer Cutler Pickering Hale and Dorr LLP
LandOfFree
Techniques for precision pattern transfer of carbon... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Techniques for precision pattern transfer of carbon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Techniques for precision pattern transfer of carbon... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2761693