Techniques for ion implantation of molecular ions

Radiant energy – Electrically neutral molecular or atomic beam devices and...

Reexamination Certificate

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C250S492210, C250S42300F, C250S424000, C250S492200, C250S492300, C118S7230FI, C315S111810, C438S514000

Reexamination Certificate

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07807961

ABSTRACT:
Techniques for ion implantation of molecular ions are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion implanter for implanting a target material with a molecular ion at a predetermined temperature to improve at least one of strain and amorphization of the target material, wherein the molecular ion is generated in-situ within an ion source.

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Arno, J. “Report on in-Situ Antimony Fluoride Generation for Ion Implant Processes”, IEEE 14thInternational Conference on Ion Implantation Technology Proceedings, Sep. 2002.
Josep Arno, “Report on in-Situ antimony fluoride generation for ion implant processes,” 14th International Conference on Ion Implantation Technology Proceedings, 2002, 0-7803-7155-0, pp. 452-454, IEEE.

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