Radiant energy – Electrically neutral molecular or atomic beam devices and...
Reexamination Certificate
2008-10-08
2010-10-05
Wells, Nikita (Department: 2881)
Radiant energy
Electrically neutral molecular or atomic beam devices and...
C250S492210, C250S42300F, C250S424000, C250S492200, C250S492300, C118S7230FI, C315S111810, C438S514000
Reexamination Certificate
active
07807961
ABSTRACT:
Techniques for ion implantation of molecular ions are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion implanter for implanting a target material with a molecular ion at a predetermined temperature to improve at least one of strain and amorphization of the target material, wherein the molecular ion is generated in-situ within an ion source.
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Hatem Christopher R.
Rowland Christopher A.
Varian Semiconductor Equipment Associates Inc.
Wells Nikita
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