Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-03-29
2010-02-02
Souw, Bernard E (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S42300F, C315S111810, C315S111910, C313S362100
Reexamination Certificate
active
07655931
ABSTRACT:
Techniques improving the performance and extending the lifetime of an ion source with gas mixing are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for improving performance and extending lifetime of an ion source in an ion implanter. The method may comprise introducing a predetermined amount of dopant gas into an ion source chamber. The dopant gas may comprise a dopant species. The method may also comprise introducing a predetermined amount of diluent gas into the ion source chamber. The diluent gas may dilute the dopant gas to improve the performance and extend the lifetime of the ion source. The diluent gas may further comprise a co-species that is the same as the dopant species.
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Souw Bernard E
Varian Semiconductor Equipment Associates Inc.
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