Techniques for impeding reverse engineering

Details Techniques for impeding reverse engineering Techniques for impeding reverse engineering

2011-08-09

2011-08-09

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S200000

Reexamination Certificate

active

07994042

ABSTRACT:
Anti-reverse engineering techniques are provided. In one aspect, a method for forming at least one feature in an insulating layer is provided. The method comprises the following steps. Ions are selectively implanted in the insulating layer so as to form at least one implant region within the insulating layer, the implanted ions being configured to alter an etch rate through the insulating layer within the implant region. The insulating layer is etched to, at the same time, form at least one void both within the implant region and outside of the implant region, wherein the etch rate through the insulating layer within the implant region is different from an etch rate through the insulating layer outside of the implant region. The void is filled with at least one conductor material to form the feature in the insulating layer.

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