Techniques for forming trenches in a silicon layer of a substrat

Details Techniques for forming trenches in a silicon layer of a substrat Techniques for forming trenches in a silicon layer of a substrat

1998-03-31

1999-08-10

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438714, 438719, H01H 100

Patent

active

059358742

ABSTRACT:
A method for etching a trench in a monocrystal silicon layer. The method includes providing a plasma processing system having a plasma processing chamber. The plasma processing system has a variable plasma generation source and a variable ion energy source with the variable plasma generation source being configured to be controlled independently of the variable ion energy source. The method further includes flowing an etchant source gas that includes O.sub.2, helium, and at least one of SF.sub.6 and NF.sub.3 into the plasma processing chamber. There is also included energizing both the variable plasma generation source and the variable ion energy source to form a plasma from the etchant source gas. Additionally, there is included employing the plasma to etch the trench.

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Rob Legtenberg et al., "Anisotropic Reactive Ion Etching of Silicon Using SF.sub.6 /O.sub.2 /CHF.sub.3 Gas Mixtures," Jun. 1995, J. Electrochem Soc. vol. 142, No. 6, pp. 2020-2027.
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W.H. Juan et al., "High-aspect-ratio Si Etching for Microsensor Fabrication," May/Jun. 1995, J. Vac.Sci.Technol.A 13(3), pp. 834-838.

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