Techniques for etching with a photoresist mask

Details Techniques for etching with a photoresist mask Techniques for etching with a photoresist mask

1997-12-23

2000-09-19

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438725, 216 46, 216 49, 430317, H01L 213065

Patent

active

061211540

ABSTRACT:
A method for improving profile control during an etch of a nitride layer disposed above a silicon substrate is disclosed. The nitride layer 106 is disposed below a photoresist mask 108A. The method includes positioning the substrate, including the nitride layer and the photoresist mask, in a plasma processing chamber. There is also included flowing a chlorine-containing etchant source gas into the plasma processing chamber. Further, there is included igniting a plasma out of the chlorine-containing etchant source gas to form a chlorine-based plasma within the plasma processing chamber. Additionally, there is included treating, using a chlorine-based plasma, the photoresist mask in the plasma processing chamber. The treatment of the photoresist is configured to etch at least a portion of the photoresist mask and to deposit passivation polymer on vertical sidewalls of the photoresist mask without etching through the nitride layer.

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International Search Report, EPO, Apr. 16, 1999.

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