Techniques for etching an oxide layer

Details Techniques for etching an oxide layer Techniques for etching an oxide layer

1997-12-22

2000-07-04

Bueker, Richard

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438711, 216 67, H01L 21311, H01L 21465, C23F 102

Patent

active

060838442

ABSTRACT:
A method for etching a substrate having thereon a silicon dioxide-containing layer disposed above a TiN layer is disclosed. The method includes positioning the substrate in the plasma processing chamber. There is also included flowing an etchant source gas that includes CO, CHF.sub.3, neon and N.sub.2 into the plasma processing chamber. Further, there is included forming a plasma out of the etchant source gas within the plasma processing chamber to cause etching of the silicon-dioxide-containing layer.

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Li, et al., "Selective reactive ion etching of silicon nitride over silicon using CHF.sub.3 with N.sub.2 addition", Sep./Oct. 1995, Journal of vacuum Science & Technology B, pp. 2008-2012.
International Search Report, EPO, Jul. 4, 1999.

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