Techniques for etching a silicon dioxide-containing layer

Details Techniques for etching a silicon dioxide-containing layer Techniques for etching a silicon dioxide-containing layer

1997-09-29

1999-02-02

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438724, 438239, H01L 21302

Patent

active

058664858

ABSTRACT:
A method in a plasma processing chamber for improving oxide-to-nitride selectivity while etching a borophosphosilicate glass (BPSG)-containing layer to create a self-aligned contact on a semiconductor substrate. The (BPSG)-containing layer is disposed on a SiN layer and into a via formed through the SiN layer. The method includes placing the substrate into the plasma processing chamber, and flowing an etchant source gas into the plasma processing chamber. The etchant source gas includes C.sub.4 F.sub.8 and an additive gas other than carbon monoxide (CO). The additive gas includes molecules having both oxygen atoms and carbon atoms in a 1:1 ratio. The method further includes exciting the etchant source gas with a radio frequency (RF) power source having a frequency of 13.56 MHz to strike a plasma from the etchant source gas, thereby etching at least partially through the BPSG-containing layer.

REFERENCES:
patent: 4376672 (1983-03-01), Wang et al.
patent: 5302236 (1994-04-01), Tahara et al.
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 5700737 (1997-12-01), Yu et al.
"Characterization of Highly Selective SiO.sub.2 /Si.sub.3 N.sub.4 Etching of High Aspect Ratio Holes"; Hisataka et al.; Jpn. J. Appl. Phys., Part 1 (1996), 35(4B), pp. 2488-2493.

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