Techniques for coupling in semiconductor devices and...

Details Techniques for coupling in semiconductor devices and... Techniques for coupling in semiconductor devices and...

2006-05-16

2006-05-16

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S222000

Reexamination Certificate

active

07045838

ABSTRACT:
Techniques for exchange coupling of magnetic layers in semiconductor devices are provided. In one aspect, a semiconductor device is provided. The device comprises at least two magnetic layers, and a spacer layer formed between the magnetic layers, the spacer layer being configured to provide ferromagnetic exchange coupling between the layers, the magnetic layers experiencing anti-ferromagnetic dipole coupling, such that a net coupling of the magnetic layers is anti-ferromagnetic in a zero applied magnetic field. The semiconductor device may comprise magnetic random access memory (MRAM). In another aspect, a method for coupling magnetic layers in a semiconductor device comprising at least two magnetic layers and a spacer layer therebetween, the method comprises the following step. Ferromagnetic exchange coupling is provided of the magnetic layers, the magnetic layers experiencing anti-ferromagnetic dipole coupling, such that a net coupling of the magnetic layers is anti-ferromagnetic in a zero applied magnetic field.

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Parkin, S.S.P., “Giant Magnetoresistance and Oscillatory Interlayer Coupling in Polycrystalline Transition Metal Multilayers,” Ultrathin Magnetic Structures II, pp. 148-194 (May 12, 1995).

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