Static information storage and retrieval – Read/write circuit
Reexamination Certificate
2008-07-08
2008-07-08
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Read/write circuit
C365S227000, C365S229000
Reexamination Certificate
active
11196369
ABSTRACT:
Embodiments of the invention generally provide a method and wordline driver having a reduced leakage current. In one embodiment, a wordline is driven to a boosted high voltage with a driver transistor of the wordline driver if the wordline driver is in an operational mode and the wordline is driven to a downward-driven low voltage if the wordline driver is in a standby mode. The driver transistor is electrically isolated from the downward-driven low voltage of the wordline when the wordline driver is in the standby mode. A leakage current in the wordline driver is thereby reduced.
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Infineon - Technologies AG
Nguyen Dang
Nguyen Tuan T
Patterson & Sheridan L.L.P.
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