Technique to read special mode register

Details Technique to read special mode register Technique to read special mode register

2005-05-11

2009-10-27

Chance, Christian P (Department: 2187)

Electrical computers and digital processing systems: memory

Storage accessing and control

Control technique

C711S220000

Reexamination Certificate

active

07610455

ABSTRACT:
Embodiments are provided in which a method and apparatus for accessing a special mode register of a memory device are described. A command to access the special mode register is detected. The command is executed by driving data from the special mode register onto a data bus. The command self-terminates by placing the data bus in a high impedance state. One or more unused address bits may specify one of a plurality of special mode registers to be accessed by the command. The command to access the special mode register may be incapable of changing one or more bits in a mode register.

REFERENCES:
patent: 2004/0196725 (2004-10-01), Kang
patent: 2006/0044909 (2006-03-01), Kinsley et al.
patent: 2006/0181957 (2006-08-01), Walker
Samsung GDDR2 SDRAM Part No. K4N26323AE-GC Data Sheet.
Samsung GDDR2 SDRAM Part No. K4N26323AE-GC Data Sheet, pp. 8-12.
U.S. Appl. No. 60/653,020, Status Register for Non-Volatile Memories, Feb. 14, 2005.
Jeff Janzen, DDR2 Offers New Features and Functionality, Micron Designline, vol. 12, Issue 2, 3Q03, Jul. 31, 2003, pp. 1-16, Micron Technology, Inc., Boise, Idaho.
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Samsung Electronics Data Sheet No. K4N26323AE-GC, “128Mbit GDDR2 SDRAM: 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL”, Revision 1.7, Jan. 2003, available at www.datasheetcatalog.org/datasheets2/84/846627—1.pdf.

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