Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-04
2006-07-04
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07071087
ABSTRACT:
A technique to grow high quality and large area ZnSe layer on Si substrate is provided, comprising growing GexSi1−x/Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and finally growing a ZnSe film on top Ge buffer layers.Two concepts are applied in the process of this invention, the first one is to block the dislocations generated from GexSi1−xepitaxial layers and to terminate the propagated upward dislocations by using strained interfaces, accordingly the dislocation density of ZnSe layer is greatly reduced and the surface roughness is improved; the second concept is to solve the problems of anti-phase domain due to growth of polar materials on non-polar material using off-cut angle Si substrate, and that is free from diffusion problems between different atoms while generally growing ZnSe layers on Si substrate.
REFERENCES:
patent: 6107653 (2000-08-01), Fitzgerald
patent: 6291321 (2001-09-01), Fitzgerald
R.D Bringans et al, Use of ZnSe as an interlayer for GaAs growth on Si, Dec. 12, 1992, American Institute of Physics, Appl. Phys. Lett. 61 (2) Jul. 13, 1992, pp. 195-197.
“Characterization of Znse/Ge material growth ù sing the atomic force microscope”□□By: Ibrahim M. Abdel-Motaleg, S. Pal. P. Desai□□Journal of Crystal Growth 2 17 (2000) pp. 366-370□□Apr. 19, 2000.
“Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates” By: J.A. Carlin and S.A. Ringel (Dept. of Elec. Enga, The Ohio St. Univ.), E.A. Fitzgerald (Massachusetts Institute of Technology), M. Bulsara (Amberwave Systems Corp . . . B.M. Keyes (Nat'l Renewable Energy Lab.) Applied Physics Letters, vol. 7.
“Characterization of ZnSe/Ge material growth using the atomic force microscope” By: Ibrahim M. Abdel-Motaleg, S. Pal, P. Desai Journal of Crystal Growth 217 (2000) pp. 366-370 Apr. 19, 2000.
“Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells” By: Naoki Mino, Masakazu Kobayashi, Makoto Konagai, Kiyoshi Takahashi Dept. of Physical Electronics, Tokyo Institute of Technology J. Appl. Phys. vol. 58, No. 2 pp. 793-796 Mar. 27, 1985.
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“Molecular Beam Epitaxial Growth of ZnSe Layers on GaAs and Si Substrates” By: M. López-Lópeza, V.H. Méndez-Garcìaa, Meléndez-Liraa, J. Luyo-Alvaradoa, M. Tamuraa, K. Momoseb, H. Yonezuba. Physics Dept . . . Centro de Investigación y de Estudios Avanzados del IPN b. Dept. of Electrical and Electronic Engineering, Toyohashi Univ. of Technology Phys. stat. sol. (b) 220, pp. 99-109 2000.
“Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates” By: J.A. Carlin and S.A. Ringel (Dept. of Elec. Eng., The Ohio St. Univ.), E.A. Fitzgerald (Massachusetts Institute of Technology), M. Bulsara (Amberwave Systems Corp., B.M. Keyes (Nat'l Renewable Energy Lab.) Applied Physics Letters, vol. 76, No. 14 Apr. 3, 2000.
Chang Chun-Yen
Chou Wu-Ching
Lee Chung-Liang
Luo Guangli
Yang Chu-Shou
Bucknam and Archer
Coleman W. David
Tobergte Nicholas
Witty Mate Corporation
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