Technique for uniformity tuning in an ion implanter system

Details Technique for uniformity tuning in an ion implanter system Technique for uniformity tuning in an ion implanter system

2008-04-08

2008-04-08

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S442110, C250S398000, C250S39600R, C315S506000

Reexamination Certificate

active

11300425

ABSTRACT:
A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.

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