Technique for transferring strain into a semiconductor region

Details Technique for transferring strain into a semiconductor region Technique for transferring strain into a semiconductor region

2005-04-22

2009-02-24

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S520000, C438S938000, C257SE21335

Reexamination Certificate

active

07494906

ABSTRACT:
A dislocation region is formed by implanting a light inert species, such as hydrogen, to a specified depth and with a high concentration, and by heat treating the inert species to create “nano” bubbles, which enable a certain mechanical decoupling to underlying device regions, thereby allowing a more efficient creation of strain that is induced by an external stress-generating source. In this way, strain may be created in a channel region of a field effect transistor by, for instance, a stress layer or sidewall spacers formed in the vicinity of the channel region.

REFERENCES:
patent: 6335233 (2002-01-01), Cho et al.
patent: 6583000 (2003-06-01), Hsu et al.
patent: 6800887 (2004-10-01), Weber et al.
patent: 6803270 (2004-10-01), Dokumachi et al.
patent: 7169675 (2007-01-01), Tan et al.
patent: 7227205 (2007-06-01), Bryant et al.
patent: 7361570 (2008-04-01), Liu
patent: 2003/0201468 (2003-10-01), Christiansen et al.
patent: 2004/0018701 (2004-01-01), Ueda
patent: 2004/0058482 (2004-03-01), Yoshida et al.
patent: 2004/0075148 (2004-04-01), Kumagai et al.
patent: 2004/0142537 (2004-07-01), Lee et al.
patent: 2004/0159834 (2004-08-01), Huang et al.
patent: 2005/0003605 (2005-01-01), Dokumaci et al.
patent: 2005/0247926 (2005-11-01), Sun et al.
patent: 2006/0148155 (2006-07-01), Coleman
patent: 102 18 381 (2004-02-01), None
patent: WO 0247167 (2001-12-01), None
patent: WO 0247167 (2002-06-01), None
Trinkhaus, H. et al. “Strain Relaxation Mechanism for Hydrogen-Implanted Si1-xGex/Si(100) Heterostructures.” Appl. Phys. Lett. vol. 76 (2000): pp. 3552-3554.
Fuchtner, P.F.P., et al. “Overpressurized Bubbles Versus Voids Formed in Helium Implanted and Annealed Silicon.” Appl. Phys. Lett., vol. 70, No. 6 (Feb. 10, 1997): pp. 732-734.

Affiliated with

Also associated with

Rating

Technique for transferring strain into a semiconductor region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique for transferring strain into a semiconductor region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for transferring strain into a semiconductor region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4101107