Technique for the growth of compositionally ungraded single crys

Details Technique for the growth of compositionally ungraded single crys Technique for the growth of compositionally ungraded single crys

1985-05-07

1986-07-29

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG83, 260707, C30B 1510

Patent

active

046029796

ABSTRACT:
This invention describes a modified method of growing high purity, compositionally ungraded, single crystals of multicomponent solid solutions by the Czochralski, Kyropoulos, Bridgman or other related melt growth technique. In the method of this invention, the container or crucible used to contain the multicomponent crystal growing melt is fabricated from the higher melting point component of the multicomponent melt while lower melting point components are positioned within the crucible. The temperature of the crucible is then raised beyond the melting point of the lower melting point component to a temperature which is the exact melting point of the solid solution, or crystal alloy desired. This will dissolve an amount of the crucible material (higher melting point component) equal to the exact amount required to produce a solid solution having the desired composition. A seed is then introduced into the melt and normal crystal pulling is initiated resulting in the growth of a compositionally ungraded crystal having a uniform compositional content throughout its structure.

REFERENCES:
patent: 2858199 (1958-10-01), Larson
patent: 3053635 (1962-09-01), Shockley
patent: 3058854 (1962-10-01), Angello
patent: 4071396 (1978-01-01), Holman
patent: 4165361 (1979-08-01), Milstein

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