Technique for strain engineering in Si-based Transistors by...

Details Technique for strain engineering in Si-based Transistors by... Technique for strain engineering in Si-based Transistors by...

2006-08-18

2009-06-09

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

Reexamination Certificate

active

07544551

ABSTRACT:
By incorporating an atomic species of increased covalent radius, which may at least partially substitute germanium, a highly efficient strain mechanism may be provided, in which the risk of stress relief due to germanium conglomeration and lattice defects may be reduced. The atomic species of increased radius, such as tin, may be readily incorporated by epitaxial growth techniques on the basis of tin hydride.

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Search Report Dated Mar. 19, 2007 in Serial No. PCT/US06/041559.
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