Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-30
2008-09-30
Lewis, Monica (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29287
Reexamination Certificate
active
11380457
ABSTRACT:
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.
REFERENCES:
patent: 4211582 (1980-07-01), Horng et al.
patent: 4238278 (1980-12-01), Antipov
patent: 4491486 (1985-01-01), Iwai
patent: 4866004 (1989-09-01), Fukushima
patent: 4895810 (1990-01-01), Meyer et al.
patent: 4994406 (1991-02-01), Vasquez et al.
patent: 5019522 (1991-05-01), Meyer et al.
patent: 5366914 (1994-11-01), Takahashi et al.
patent: 5432113 (1995-07-01), Tani
patent: 5479048 (1995-12-01), Yallup et al.
patent: 5585285 (1996-12-01), Tang
patent: 5902127 (1999-05-01), Park
patent: 5926713 (1999-07-01), Hause et al.
patent: 6174773 (2001-01-01), Fujishima
patent: 6214698 (2001-04-01), Liaw et al.
patent: 6495421 (2002-12-01), Luo
patent: 6534367 (2003-03-01), Peake et al.
patent: 6613644 (2003-09-01), Lachner
patent: 6762473 (2004-07-01), Goushcha et al.
patent: 6797589 (2004-09-01), Adams et al.
patent: 6940144 (2005-09-01), Nakayama
patent: 7015104 (2006-03-01), Blanchard
patent: 7023069 (2006-04-01), Blanchard
patent: 7041560 (2006-05-01), Hshich
patent: 7052982 (2006-05-01), Hshich et al.
patent: 2004/0157410 (2004-08-01), Yamaguchi
patent: 2005/0176192 (2005-08-01), Hshieh
patent: 2006/0079024 (2006-04-01), Akram
patent: 2007/0166997 (2007-07-01), Knorr
patent: 2007/0262378 (2007-11-01), Wilson et al.
patent: 2005001941 (2005-01-01), None
Dictionary.com www.dictionary.reference.com.
Brogan Conor
Griffin Hugh J.
MacNamara Cormac
Wilson Robin
Icemos Technology Corporation
Lewis Monica
LandOfFree
Technique for stable processing of thin/fragile substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Technique for stable processing of thin/fragile substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for stable processing of thin/fragile substrates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3942499