Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1994-10-11
1999-08-17
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438798, 438662, H01L 21428
Patent
active
059407271
ABSTRACT:
A method for providing a lateral conductive link between conductive elements, e.g., metals, placed on a first non-conductive material, wherein a second non-conductive material is placed on said first non-conductive material to form an interface therebetween in a region between the conductive elements. Energy is applied to the conductive elements to produce mechanical strains by thermal expansion in the conductive elements which initiate a rupturing of the interface between the non-conductive materials so as to provide at least one fissure therein extending between the conductive elements. The energy applied causes a portion of at least one of the conductive elements to flow in such fissure to provide a lateral conductive link between the conductive elements.
REFERENCES:
patent: 4240094 (1980-12-01), Mader
patent: 4585490 (1986-04-01), Raffel et al.
patent: 4636404 (1987-01-01), Raffel et al.
patent: 4665295 (1987-05-01), McDavid
patent: 4700214 (1987-10-01), Johnson
patent: 4701860 (1987-10-01), Mader
patent: 4720470 (1988-01-01), Johnson
patent: 4751197 (1988-06-01), Wills
patent: 4810663 (1989-03-01), Raffel et al.
patent: 4893167 (1990-01-01), Boudou et al.
patent: 4912066 (1990-03-01), Wills
patent: 4916809 (1990-04-01), Boudou et al.
patent: 4937475 (1990-06-01), Rhodes et al.
patent: 4968643 (1990-11-01), Mukai
patent: 5087589 (1992-02-01), Chapman et al.
patent: 5110754 (1992-05-01), Lowrey et al.
patent: 5166547 (1992-11-01), Babkanian et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5250464 (1993-10-01), Wong et al.
patent: 5258643 (1993-11-01), Cohen
patent: 5284788 (1994-02-01), Spratt et al.
patent: 5451811 (1995-09-01), Whitten et al.
Cohen, S.S. et al, "The Mechanism of Laser-Induced Vertical Links," Journal of Electrochemical Society, vol. 138, No. 10, Oct. 1991, pp. 3013-3018.
Rouillon-Martin, Martine, et al., "Laser Programmable Vias for Reconfiguration of Integrated Circuits," 190/SPIE, vol. 1138 Optical Microlithography and Metrology for Microcircuit Fabrication, 1989, pp. 190-197.
Liu et al., "Area-Selective Laser Processing Techniques for Multichip Interconnect, Y.S.," Mat. Res. Soc. Symp. Proc., vol. 154, Materials Research Society, 1989, pp. 11-20.
Dong Sam Ha & Vijay P. Kumar, On the Design of High-Yield Reconfigurable PLA's, 0018-9340/90/0400-0470, IEEE, 1992, pp. 470-479.
Bernstein, Joseph B. et al., "High Density Metal Cross-Point Laser Linking," 0-8186-2482-5/92, IEEE, 1992, pp. 176-181.
Y. Morishige et al., "High Performance Contact Formation in LSI Circuit Restructing Using Visible Pulse Laset Induced Ablation and CVD," 0169-4332/90, Elsevier Science Publishers B.V. (North Holland), 1990, pp. 108-112.
Hartman, H.D., "Yield and Reliability of Laser Formed Verticak Links," 146/SPIE, vol. 2090 Multilevel Interconnection, 1993, pp. 146-160.
Lee, Rex A., et al., "Laser Programmable Interconnects for the Quick Turn Around of Electronic Systems," 4.6/Lee/Laser-Programmable Interconnects, Nov. 1983, pp. 81-84.
M. Burnus et al., "Laserpersonalization of Interconnection Arrays For Hybride ACIS's," 0-7803-0867-0/93, IEEE, 1993, pp. 329-338.
Everhart Caridad
Massachusetts Institute of Technology
LandOfFree
Technique for producing interconnecting conductive links does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Technique for producing interconnecting conductive links, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for producing interconnecting conductive links will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-325195