Technique for predicting oxygen precipitation in semiconductor w

Details Technique for predicting oxygen precipitation in semiconductor w Technique for predicting oxygen precipitation in semiconductor w

1981-02-17

1982-08-03

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

324 62, C30B 1520

Patent

active

043426166

ABSTRACT:
A method or technique is disclosed for predicting precisely where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted precisely where compensated intrinsic regions have been measured in the initial measurements.

REFERENCES:
patent: 3669757 (1972-06-01), Kaufmann et al.
patent: 3805160 (1974-04-01), Phibrick et al.
Physical Review vol. 28, No. 8, pp. 882-887, 8/57 Kaiser et al.
Physical Review vol. 105, 3/15/57, pp. 1751-1756 Kaiser.
IEEE Transactions on Instrumentation and Measurement vol. 1M-13, 12/67 No. 4 pp. 323-324.

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