Technique for non-destructive metal delamination monitoring...

Details Technique for non-destructive metal delamination monitoring... Technique for non-destructive metal delamination monitoring...

2006-09-29

2009-12-29

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S631000, C438S654000

Reexamination Certificate

active

07638424

ABSTRACT:
By providing large area metal plates in combination with respective peripheral areas of increased adhesion characteristics, delamination events may be effectively monitored substantially without negatively affecting the overall performance of the semiconductor device during processing and operation. In some illustrative embodiments, dummy vias may be provided at the periphery of a large area metal plate, thereby allowing delamination in the central area while substantially avoiding a complete delamination of the metal plate. Consequently, valuable information with respect to mechanical characteristics of the metallization layer as well as process flow parameters may be efficiently monitored.

REFERENCES:
patent: 6313541 (2001-11-01), Chan et al.
patent: 6501186 (2002-12-01), Yu et al.
patent: 2005/0142840 (2005-06-01), Fujimaki
patent: 2005/0170640 (2005-08-01), Nakagawa et al.

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