Technique for matching performance of ion implantation...

Details Technique for matching performance of ion implantation... Technique for matching performance of ion implantation...

2006-10-16

2009-11-17

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492300

Reexamination Certificate

active

07619229

ABSTRACT:
A technique for matching performance of ion implantation devices using an in-situ mask. In one particular exemplary embodiment, ion implantation is performed on a portion of a substrate while the remainder is masked off. The substrate is then moved to a second implanter tool. Implantation is then performed on another portion of the same substrate using the second tool while a mask covers the remainder of the substrate, including the first portion. After the second implantation process, parametric testing may be performed on semiconductor devices manufactured on the first and second portions to determine if there is variation in one or more performance characteristics of these semiconductor devices. If variations are found, changes may be suggested to one or more operating parameters of one of the implantation tools to reduce performance variation of implanters within the fabrication facility.

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