Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2007-05-08
2007-05-08
Olsen, Allan (Department: 1763)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S036000, C216S057000, C438S053000, C438S456000, C438S459000, C257S419000
Reexamination Certificate
active
11107083
ABSTRACT:
A technique for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer, with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling wafer at an opening of the cavity. Then, a bulk etch is performed on the first side of the handling wafer to modify the sidewall of the cavity to a second angle greater than about 90 degrees, with respect to the first side of the handling wafer at the opening of the cavity. Next, a second side of a second wafer is bonded to the first side of the handling wafer.
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Delphi Technologies Inc.
Funke Jimmy L.
Olsen Allan
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