Technique for ion beam angle spread control for advanced...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C250S397000, C250S492200, C250S492300, C250S39600R, C250S442110, C250S307000, C250S310000, C250S311000

Reexamination Certificate

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07394078

ABSTRACT:
A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

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