Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-07-01
2008-07-01
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S397000, C250S492200, C250S492300, C250S39600R, C250S442110, C250S307000, C250S310000, C250S311000
Reexamination Certificate
active
07394078
ABSTRACT:
A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.
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Gupta Atul
Olson Joseph C.
Berman Jack I.
Sahu Meenakshi S
Varian Semiconductor Equipment Associates Inc.
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