Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-01-11
2011-01-11
Johnston, Phillip A (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S3960ML
Reexamination Certificate
active
07868305
ABSTRACT:
A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.
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Campbell, et al., “Beam Angle Control on the VIISTa 80 Ion Implanter,” IIT Proceedings, 2002, pp. 193-196.
Gupta Atul
Olson Joseph C.
Johnston Phillip A
Varian Semiconductor Equipment Associates Inc.
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