Technique for ion beam angle process control

Details Technique for ion beam angle process control Technique for ion beam angle process control

2008-03-25

2008-03-25

Berman, Jack (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S442110, C250S39600R, C250S492300, C250S300000, C250S311000, C250S307000

Reexamination Certificate

active

11146064

ABSTRACT:
A technique for ion beam angle process control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle process control in an ion implanter system. The method may comprise directing one or more ion beams at a substrate surface. The method may also comprise determining an average spread of incident angles at which the one or more ion beams strike the substrate surface. The method may further comprise adjusting the one or more ion beams based at least in part on the average spread of incident angles to produce a desired spread of ion beam incident angles.

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Campbell. C., et al., “Beam Angle Control on the VIISta 80 Ion Implanter,” Ion Implantation Technology, 2002 Proceedings of the 14th International Conference on Sep. 22-27, 2002, Piscataway, NJ, US, IEEE, Sep. 22, 2003, pp. 193-196.

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