Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-15
2008-12-30
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S338000, C257SE29027
Reexamination Certificate
active
07470955
ABSTRACT:
An integrated circuit (IC) with negative potential protection includes at least one double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, which is formed in a second-type substrate. The IC also includes a second-type+ isolation ring formed in the substrate to isolate the first-type epitaxial pocket and a first-type+ ring formed through the first-type epitaxial pocket between the second-type+ isolation ring and the DMOS cell.
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EP Search Report dated Apr. 9, 2008.
Laine, J.P., et al.: “Substrate current control in smart power IC's with a flexible protection structure”; Proceedings of the 2002 Bipolar/BICOMS Circuits and Technology Meeting. (BCTM). Minneapolis, MN, Sep. 29-Oct. 1, 2002, IEEE Bipolar/BICMOS Circuits and Technology Meeting, New York, NY: IEEE, US Sep. 29, 2002, pp. 36-40, XP010613106. ISBN: 0-7803-7561-0.
Campanile Nicholas T.
Clear Troy D.
Glenn Jack L.
Gose Mark W.
Osborn Doublas B.
Delphi Technologies Inc.
Funke Jimmy L.
Pert Evan
Sandvik Ben P
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