Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-08
2007-05-08
Ahmadi, Moshen (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S681000, C438S676000, C438S238000, C118S050100, C361S306300, C427S582000, C257SE21170, C257SE21146, C257SE21160, C257SE21161
Reexamination Certificate
active
10756222
ABSTRACT:
A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
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Li Weimin
Yang Sam
Ahmadi Moshen
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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