Technique for high-efficiency ion implantation

Details Technique for high-efficiency ion implantation Technique for high-efficiency ion implantation

2007-02-13

2007-02-13

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S442110, C250S398000, C250S39600R, C315S506000

Reexamination Certificate

active

11313714

ABSTRACT:
A technique for high-efficiency ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for high-efficiency ion implantation. The apparatus may comprise one or more measurement devices to determine a shape of an ion beam spot in a first dimension and a second dimension. The apparatus may also comprise a control module to control movement of the ion beam across a substrate according to a two-dimensional velocity profile, wherein the two-dimensional velocity profile is determined based at least in part on the shape of the ion beam spot, and wherein the two-dimensional velocity profile is tunable to maintain a uniform ion dose and to keep the ion beam spot from going fully off the substrate surface.

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