Technique for growth of thin film lithium niobate by liquid phas

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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423593, B01J 1718

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active

039986870

ABSTRACT:
A liquid phase epitaxial growth technique for growing lithium niobate films on lithium tantalate substrates involves growth from a flux system based on either lithium borate, lithium tungstate, tungsten oxide or potassium tungstate. Optical waveguiding occurs in films grown from the described flux systems.

REFERENCES:
patent: 2758008 (1956-08-01), Reisman et al.
patent: 3446603 (1969-05-01), Loiacono et al.
Tien et al., Applied Physics Letters, vol. 25, No. 10, 11/15/74, pp. 563-565.
Peterson et al., Applied Physics Letters, vol. 5, No. 3, 8/1/64,. pp. 62-64.
Miyazawa, Applied Physics Letters, vol. 23, No. 4, 8/15/73, pp. 198-200.
Preparation of Single Crystals --Lawson Butterworth Scientific Pub., 1958, London, pp. 184, 185.

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