Technique for forming interconnect structures with reduced...

Details Technique for forming interconnect structures with reduced... Technique for forming interconnect structures with reduced...

2008-05-20

2008-05-20

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S663000, C438S687000

Reexamination Certificate

active

07375031

ABSTRACT:
By improving the purity of metal lines and the crystalline structure, the overall performance of metal lines, especially of highly scaled copper-based semiconductor devices, may be enhanced. The modification of the crystalline structure of the metal lines may be performed by a heat treatment generating locally restricted heating zones, which are scanned along the length direction of the metal lines, and/or a heat treatment comprising a heating step in a vacuum ambient followed by a heating step in a reducing ambient.

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PCT Search Report, PCT/US2006/011695, Mar. 8, 2006.
Official Communication from German Patent & Trademark Office dated Nov. 27, 2007.

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